MSCDC50X1201AG Details_MSCDC50X1201AG PDF Document_Microchip Technology-Galaxy Core City

Diodes - Bridge Rectifiers

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Specifications

Description	Details
Series	-
Package	Tube
Diode Type	Three Phase
Technology	Silicon Carbide Schottky
Voltage - Peak Reverse (Max)	1.2 kV
Current - Average Rectified (Io)	-
Voltage - Forward (Vf) (Max) @ If	-
Current - Reverse Leakage @ Vr	200 µA @ 1200 V
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP1F

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