MURT10060R Details_MURT10060R PDF Document_GeneSiC Semiconductor-Galaxy Core City

Diodes - Rectifiers - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Diode Configuration	-
Diode Type	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max)	600 V
Current - Average Rectified (Io) (per Diode)	100A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 100 A
Speed	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)	75 ns
Current - Reverse Leakage @ Vr	25 µA @ 50 V
Operating Temperature - Junction	-40°C ~ 175°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower

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