GB20SLT12-247D Details_GB20SLT12-247D PDF Document_GeneSiC Semiconductor-Galaxy Core City

Diodes - Rectifiers - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Diode Configuration	1 Pair Common Cathode
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io) (per Diode)	25A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 10 A
Speed	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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