MBRT600150R Details_MBRT600150R PDF Document_GeneSiC Semiconductor-Galaxy Core City

Diodes - Rectifiers - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Diode Configuration	1 Pair Common Anode
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	150 V
Current - Average Rectified (Io) (per Diode)	300A
Voltage - Forward (Vf) (Max) @ If	880 mV @ 300 A
Speed	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1 mA @ 150 V
Operating Temperature - Junction	-55°C ~ 150°C
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower

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