GD2X100MPS06N Details_GD2X100MPS06N PDF Document_GeneSiC Semiconductor-Galaxy Core City

Diodes - Rectifiers - Arrays

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Specifications

Description	Details
Series	MPS™
Package	Tube
Diode Configuration	2 Independent
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io) (per Diode)	108A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 100 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	5 µA @ 650 V
Operating Temperature - Junction	-55°C ~ 175°C
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227

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