FFSM1065A Details_FFSM1065A PDF Document_ON Semiconductor-Galaxy Core City

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	11A (DC)
Voltage - Forward (Vf) (Max) @ If	1.75 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	200 µA @ 650 V
Capacitance @ Vr, F	575pF @ 1V, 100kHz
Mounting Type	Surface Mount
Package / Case	4-PowerTSFN
Supplier Device Package	4-PQFN (8x8)
Operating Temperature - Junction	-55°C ~ 175°C

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