NXPSC04650Q Details_NXPSC04650Q PDF Document_WeEn Semiconductors-Galaxy Core City

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	-
Package	Tube
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	4A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 4 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	170 µA @ 650 V
Capacitance @ Vr, F	130pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	TO-220AC
Operating Temperature - Junction	175°C (Max)

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