IDC08S120EX1SA3 Details_IDC08S120EX1SA3 PDF Document_Infineon Technologies-Galaxy Core City

Diodes - Rectifiers - Single

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Specifications

Description	Details
Series	CoolSiC™+
Package	Bulk
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	7.5A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 7.5 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	180 µA @ 1200 V
Capacitance @ Vr, F	380pF @ 1V, 1MHz
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Sawn on foil
Operating Temperature - Junction	-55°C ~ 175°C

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