MMBV809LT1G Details_MMBV809LT1G PDF Document_ON Semiconductor-Galaxy Core City

Diodes - Variable Capacitance (Varicaps、 Varactors)

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Specifications

Description	Details
Series	-
Package	Bulk
Capacitance @ Vr, F	6.1pF @ 2V, 1MHz
Capacitance Ratio	2.6
Capacitance Ratio Condition	C2/C8
Voltage - Peak Reverse (Max)	20 V
Diode Type	Single
Q @ Vr, F	75 @ 3V, 500MHz
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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