MMBV2105LT1G Details_MMBV2105LT1G PDF Document_ON Semiconductor-Galaxy Core City

Diodes - Variable Capacitance (Varicaps、 Varactors)

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Specifications

Description	Details
Series	-
Package	Bulk
Capacitance @ Vr, F	16.5pF @ 4V, 1MHz
Capacitance Ratio	3.2
Capacitance Ratio Condition	C2/C30
Voltage - Peak Reverse (Max)	30 V
Diode Type	Single
Q @ Vr, F	400 @ 4V, 50MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)

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