JANTXV2N5794 Details_JANTXV2N5794 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/495
Package	Bulk
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	900mV @ 30mA, 300mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	600mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Supplier Device Package	TO-78-6

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