E-L6221AD Details_E-L6221AD PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	4 NPN Darlington (Quad)
Current - Collector (Ic) (Max)	1.8A
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 1.8A
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	1W
Frequency - Transition	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	20-SOIC (0.295", 7.50mm Width)
Supplier Device Package	20-SOIC

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