MMDT2227-7 Details_MMDT2227-7 PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	40V, 60V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)	10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	200mW
Frequency - Transition	300MHz, 200MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SOT-363

Other

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