MPQ2369 TIN/LEAD Details_MPQ2369 TIN/LEAD PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	4 NPN (Quad)
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	15V
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	400nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA, 2V
Power - Max	500mW
Frequency - Transition	450MHz
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	TO-116

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