STD845DN40 Details_STD845DN40 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	4A
Voltage - Collector Emitter Breakdown (Max)	400V
Vce Saturation (Max) @ Ib, Ic	500mV @ 1A, 4A
Current - Collector Cutoff (Max)	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	12 @ 2A, 5V
Power - Max	3W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-DIP

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