NSVT3946DP6T5G Details_NSVT3946DP6T5G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V / 100 @ 10mA, 1V
Power - Max	350mW
Frequency - Transition	200MHz, 250MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-963
Supplier Device Package	SOT-963

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