MPQ3762 TIN/LEAD Details_MPQ3762 TIN/LEAD PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	4 PNP (Quad)
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	3W
Frequency - Transition	150MHz
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	14-DIP (0.300", 7.62mm)
Supplier Device Package	TO-116

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