NSVEMT1DXV6T5G Details_NSVEMT1DXV6T5G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	500pA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Power - Max	500mW
Frequency - Transition	140MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-563

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