MBT3906DW1T1 Details_MBT3906DW1T1 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Power - Max	150mW
Frequency - Transition	250MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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