NJX1675PDR2G Details_NJX1675PDR2G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	30V
Vce Saturation (Max) @ Ib, Ic	115mV @ 200mA, 2A, 170mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A, 2V
Power - Max	2W
Frequency - Transition	100MHz, 120MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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