ULN2803AFWG,C,EL Details_ULN2803AFWG,C,EL PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	8 NPN Darlington
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 350mA, 2V
Power - Max	1.31W
Frequency - Transition	-
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount
Package / Case	18-SOIC (0.295", 7.50mm Width)
Supplier Device Package	18-SOL

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