STD815CP40 Details_STD815CP40 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	1.5A
Voltage - Collector Emitter Breakdown (Max)	400V
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 350mA
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	16 @ 350mA, 5V
Power - Max	2.6W
Frequency - Transition	-
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-DIP

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