2N3838/TR Details_2N3838/TR PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN, PNP
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Power - Max	350mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-FlatPack
Supplier Device Package	6-Flatpack

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