MAT02EH Details_MAT02EH PDF Document_Analog Devices Inc.-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	20mA
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	100mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	3nA
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Power - Max	1.8W
Frequency - Transition	200MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Supplier Device Package	TO-78-6

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