2N3811U Details_2N3811U PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	50mA
Voltage - Collector Emitter Breakdown (Max)	60V
Vce Saturation (Max) @ Ib, Ic	250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1mA, 5V
Power - Max	350mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-78-6 Metal Can
Supplier Device Package	TO-78-6

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