PBSS2515VS,315 Details_PBSS2515VS,315 PDF Document_Nexperia USA Inc.-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	15V
Vce Saturation (Max) @ Ib, Ic	250mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 100mA, 2V
Power - Max	200mW
Frequency - Transition	420MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-666

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