ZHB6718TC Details_ZHB6718TC PDF Document_Diodes Incorporated-Galaxy Core City

Transistors - Bipolar - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 NPN, 2 PNP (H-Bridge)
Current - Collector (Ic) (Max)	2.5A
Voltage - Collector Emitter Breakdown (Max)	20V
Vce Saturation (Max) @ Ib, Ic	200mV @ 50mA, 2.5A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2A, 2V
Power - Max	1.25W
Frequency - Transition	140MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-223-8
Supplier Device Package	SM-8

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