PBLS1501Y,115 Details_PBLS1501Y,115 PDF Document_NXP Semiconductors-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V, 15V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 20mA, 5V / 150 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	1µA, 100nA
Frequency - Transition	280MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP

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