PBLS6005D,115 Details_PBLS6005D,115 PDF Document_NXP Semiconductors-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA, 700mA
Voltage - Collector Emitter Breakdown (Max)	50V, 60V
Resistor - Base (R1)	47kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 5V / 150 @ 500mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 340mV @ 100mA, 1A
Current - Collector Cutoff (Max)	1µA, 100nA
Frequency - Transition	185MHz
Power - Max	600mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	6-TSOP

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