BCR523UE6433HTMA1 Details_BCR523UE6433HTMA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	1kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	-
Frequency - Transition	100MHz
Power - Max	330mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	PG-SC74-6

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