PUMB3,115 Details_PUMB3,115 PDF Document_NXP Semiconductors-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	6-TSSOP

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