NSM11156DW6T1G Details_NSM11156DW6T1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	1 PNP Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V, 65V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 10V / 220 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic	250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	230mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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