IMH24T110 Details_IMH24T110 PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	600mA
Voltage - Collector Emitter Breakdown (Max)	20V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 50mA, 2.5mA
Current - Collector Cutoff (Max)	500nA (ICBO)
Frequency - Transition	150MHz
Power - Max	300mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SMT6

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