NUS2401SNT1G Details_NUS2401SNT1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar -Pre-Biased

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	2 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max)	200mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	175Ohms, 10kOhms
Resistor - Emitter Base (R2)	175Ohms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA / 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	350mW
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Supplier Device Package	SC-74

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