2307 Details_2307 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,100(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	42V
Frequency - Transition	2.3GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	20.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 500mA, 5V
Current - Collector (Ic) (Max)	1A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55BT
Supplier Device Package	55BT

Other

Price advantage, 2307 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BFP420H6327XTSA1	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 5V 25GHZ SOT343	$0.47520	In Stock:32847
BFR340FH6327XTSA1	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 9V 14GHZ TSFP-3	$0.49980	In Stock:5162
BFQ31ATC	Diodes Incorporated	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 600MHZ SOT23-3	No price	In Stock:20386
BFP720ESDH6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANSISTOR, X BAND, NPN	$0.16320	In Stock:153718
NE46134-T1-QR-AZ	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 5.5GHZ SOT89	No price	In Stock:20390