DME375A Details_DME375A PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	6.5dB
Power - Max	375W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 300mA, 5V
Current - Collector (Ic) (Max)	30A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55AW
Supplier Device Package	55AW

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