BFY193PZZZA1 Details_BFY193PZZZA1 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7.5GHz
Noise Figure (dB Typ @ f)	2.3dB ~ 2.9dB @ 2GHz
Gain	12.5dB ~ 13.5dB
Power - Max	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 30mA, 8V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	MICRO-X1
Supplier Device Package	MICRO-X1

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