TAN300 Details_TAN300 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)	-
Gain	6.6dB
Power - Max	1166W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1mA, 5V
Current - Collector (Ic) (Max)	20A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55KT
Supplier Device Package	55KT

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