TPR1000A Details_TPR1000A PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	-
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.09GHz
Noise Figure (dB Typ @ f)	-
Gain	6dB
Power - Max	2900W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	80A
Operating Temperature	200°C
Mounting Type	Chassis Mount
Package / Case	55KV
Supplier Device Package	55KV

Other

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