BFG135AE6327XT Details_BFG135AE6327XT PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	6GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain	9dB ~ 14dB
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 8V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4

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