BFR94AW,115 Details_BFR94AW,115 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2dB ~ 3dB @ 1GHz ~ 2GHz
Gain	-
Power - Max	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce	65 @ 15mA, 10V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323-3

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