10A060 Details_10A060 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	24V
Frequency - Transition	1GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB ~ 8.5dB
Power - Max	21W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 400mA, 5V
Current - Collector (Ic) (Max)	3A
Operating Temperature	200°C (TJ)
Mounting Type	Stud Mount
Package / Case	55FT
Supplier Device Package	55FT

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