NTE395 Details_NTE395 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	25V
Frequency - Transition	2.3GHz
Noise Figure (dB Typ @ f)	2.5dB ~ 4dB @ 200MHz ~ 800MHz
Gain	16dB
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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