PRF957,115 Details_PRF957,115 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	8.5GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 1.8dB @ 1GHz ~ 2GHz
Gain	-
Power - Max	270mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5mA, 6V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323-3

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