2SA1669-TB-E Details_2SA1669-TB-E PDF Document

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	3GHz
Noise Figure (dB Typ @ f)	2dB @ 900MHz
Gain	5dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 5mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	3-CP

Other

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