BFY90 Details_BFY90 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	1.3GHz
Noise Figure (dB Typ @ f)	2.5dB ~ 5dB @ 500MHz
Gain	20dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 25mA, 1V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

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