NESG2030M04-A Details_NESG2030M04-A PDF Document

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	2.3V
Frequency - Transition	60GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.1dB @ 2GHz
Gain	16dB
Power - Max	80mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	M04

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