MS1003 Details_MS1003 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Frequency - Transition	136MHz ~ 175MHz
Noise Figure (dB Typ @ f)	-
Gain	6dB
Power - Max	270W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V
Current - Collector (Ic) (Max)	20A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	M111
Supplier Device Package	M111

Other

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