SD1433 Details_SD1433 PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	7dB
Power - Max	58W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	2.5A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis, Stud Mount
Package / Case	M122
Supplier Device Package	M122

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