BFR 183T E6327 Details_BFR 183T E6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain	19.5dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 15mA, 8V
Current - Collector (Ic) (Max)	65mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	PG-SC-75

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